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1. product pro?le 1.1 general description npn/pnp general-purpose transistor pair in a very small surface-mounted device (smd) plastic package. 1.2 features n low collector capacitance n low collector-emitter saturation voltage n closely matched current gain n reduces number of components and board space n no mutual interference between the transistors n aec-q101 quali?ed 1.3 applications n general-purpose switching and ampli?cation 1.4 quick reference data BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor rev. 01 17 july 2009 product data sheet table 1. product overview type number package npn/npn complement pnp/pnp complement nxp jeita BC846BPN sot363 sc-88 bc846bs bc856bs table 2. quick reference data symbol parameter conditions min typ max unit per transistor; for the pnp transistor with negative polarity v ceo collector-emitter voltage open base - - 65 v i c collector current - - 100 ma tr1 (npn) h fe dc current gain v ce =5v; i c = 2 ma 200 300 450 tr2 (pnp) h fe dc current gain v ce = - 5v; i c = - 2ma 200 290 450
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 2 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 3. pinning pin description simpli?ed outline graphic symbol 1 emitter tr1 2 base tr1 3 collector tr2 4 emitter tr2 5 base tr2 6 collector tr1 13 2 4 5 6 sym019 2 1 3 5 6 tr1 tr2 4 table 4. ordering information type number package name description version BC846BPN sc-88 plastic surface-mounted package; 6 leads sot363 table 5. marking codes type number marking code [1] BC846BPN pj*
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 3 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 80 v v ceo collector-emitter voltage open base - 65 v v ebo emitter-base voltage open collector - 6 v i c collector current - 100 ma i cm peak collector current single pulse; t p 1ms - 200 ma i bm peak base current single pulse; t p 1ms - 200 ma p tot total power dissipation t amb 25 c [1] - 200 mw per device p tot total power dissipation t amb 25 c [1] - 300 mw t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c fr4 pcb, standard footprint fig 1. per device: power derating curve sot363 (sc-88) t amb ( c) - 75 175 125 25 75 - 25 006aab618 200 300 100 400 500 p tot (mw) 0
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 4 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. table 7. thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air [1] - - 625 k/w r th(j-sp) thermal resistance from junction to solder point - - 230 k/w per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 416 k/w fr4 pcb, standard footprint fig 2. per transistor: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab619 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 d = 1 0.75 0.50 0.33 0.10 0.05 0.02 0.01 0 0.20
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 5 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 7. characteristics table 8. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit tr1 (npn) i cbo collector-base cut-off current v cb =50v; i e =0a --15na v cb =30v; i e =0a; t j = 150 c --5 m a i ebo emitter-base cut-off current v eb =6v; i c = 0 a - - 100 na h fe dc current gain v ce =5v i c =10 m a - 280 - i c = 2 ma 200 300 450 v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - 55 100 mv i c = 100 ma; i b = 5 ma - 200 300 mv v besat base-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - 755 850 mv i c = 100 ma; i b = 5 ma - 1000 - mv v be base-emitter voltage v ce =5v i c = 2 ma 580 650 700 mv i c = 10 ma - - 770 mv c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - 1.9 - pf c e emitter capacitance v eb = 0.5 v; i c =i c =0a; f=1mhz -11-pf f t transition frequency v ce =5v; i c =10ma; f = 100 mhz 100 - - mhz nf noise ?gure v ce =5v; i c = 0.2 ma; r s =2k w ; f = 10 hz to 15.7 khz - 1.9 - db v ce =5v; i c = 0.2 ma; r s =2k w ; f = 1 khz; b = 200 hz - 3.1 - db tr2 (pnp) i cbo collector-base cut-off current v cb = - 50 v; i e =0a - - - 15 na v cb = - 30 v; i e =0a; t j = 150 c -- - 5 m a i ebo emitter-base cut-off current v eb = - 6 v; i c =0a - - - 100 na h fe dc current gain v ce = - 5v i c = - 10 m a - 270 - i c = - 2 ma 200 290 450 v cesat collector-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma - - 55 - 100 mv i c = - 100 ma; i b = - 5ma - - 200 - 300 mv
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 6 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor v besat base-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma - - 755 - 850 mv i c = - 100 ma; i b = - 5ma - - 900 - mv v be base-emitter voltage v ce = - 5v i c = - 2ma - 600 - 650 - 750 mv i c = - 10 ma - - - 820 mv c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz - 2.3 - pf c e emitter capacitance v eb = - 0.5 v; i c =i c = 0 a; f = 1 mhz -10-pf f t transition frequency v ce = - 5 v; i c = - 10 ma; f = 100 mhz 100 - - mhz nf noise ?gure v ce = - 5v;i c = - 0.2 ma; r s =2k w ; f = 10 hz to 15.7 khz - 1.6 - db v ce = - 5v;i c = - 0.2 ma; r s =2k w ; f = 1 khz; b = 200 hz - 2.9 - db table 8. characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v ce =5v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 3. tr1 (npn): dc current gain as a function of collector current; typical values fig 4. tr1 (npn): collector current as a function of collector-emitter voltage; typical values 006aaa533 200 400 600 h fe 0 i c (ma) 10 - 2 10 3 10 2 10 - 1 10 1 (3) (1) (2) 006aaa532 v ce (v) 010 8 46 2 0.08 0.12 0.04 0.16 0.20 i c (a) 0 i b (ma) = 4.50 2.70 3.15 4.05 3.60 0.45 0.90 1.35 1.80 2.25
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 7 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor v ce =5v; t amb =25 ci c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 5. tr1 (npn): base-emitter voltage as a function of collector current; typical values fig 6. tr1 (npn): base-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c v ce =5v; t amb =25 c fig 7. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values fig 8. tr1 (npn): transition frequency as a function of collector current; typical values 006aaa536 0.6 0.8 1 v be (v) 0.4 i c (ma) 10 - 1 10 3 10 2 110 006aaa534 i c (ma) 10 - 1 10 3 10 2 110 0.5 0.9 1.3 0.3 0.7 1.1 v besat (v) 0.1 (1) (2) (3) 006aaa535 1 10 - 1 10 v cesat (v) 10 - 2 i c (ma) 10 - 1 10 3 10 2 110 (1) (2) (3) 006aaa537 i c (ma) 110 2 10 10 2 10 3 f t (mhz) 10
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 8 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor f = 1 mhz; t amb =25 c f = 1 mhz; t amb =25 c fig 9. tr1 (npn): collector capacitance as a function of collector-base voltage; typical values fig 10. tr1 (npn): emitter capacitance as a function of emitter-base voltage; typical values v ce = - 5v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 11. tr2 (pnp): dc current gain as a function of collector current; typical values fig 12. tr2 (pnp): collector current as a function of collector-emitter voltage; typical values v cb (v) 010 8 46 2 006aab620 2 4 6 c c (pf) 0 006aaa539 v eb (v) 06 4 2 9 11 7 13 15 c e (pf) 5 006aaa541 200 400 600 h fe 0 i c (ma) - 10 - 2 - 10 3 - 10 2 - 10 - 1 - 10 - 1 (1) (2) (3) 006aaa540 v ce (v) 0 - 10 - 8 - 4 - 6 - 2 - 0.08 - 0.12 - 0.04 - 0.16 - 0.20 i c (a) 0 - 0.25 i b (ma) = - 2.5 - 0.5 - 0.75 - 1.0 - 1.25 - 1.5 - 1.75 - 2.0 - 2.25
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 9 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor v ce = - 5 v; t amb =25 ci c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 13. tr2 (pnp): base-emitter voltage as a function of collector current; typical values fig 14. tr2 (pnp): base-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c v ce = - 5 v; t amb =25 c fig 15. tr2 (pnp): collector-emitter saturation voltage as a function of collector current; typical values fig 16. tr2 (pnp): transition frequency as a function of collector current; typical values 006aaa544 - 0.6 - 0.8 - 1 v be (v) - 0.4 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 006aaa542 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 - 0.5 - 0.9 - 1.3 - 0.3 - 0.7 - 1.1 v besat (v) - 0.1 (1) (2) (3) 006aaa543 - 1 - 10 - 1 - 10 v cesat (v) - 10 - 2 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 (1) (2) (3) i c (ma) - 1 - 10 2 - 10 006aaa545 10 2 10 3 f t (mhz) 10
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 10 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor f = 1 mhz; t amb =25 c f = 1 mhz; t amb =25 c fig 17. tr2 (pnp): collector capacitance as a function of collector-base voltage; typical values fig 18. tr2 (pnp): emitter capacitance as a function of emitter-base voltage; typical values v cb (v) 0 - 10 - 8 - 4 - 6 - 2 006aab623 4 6 2 8 10 c c (pf) 0 006aaa547 v eb (v) 0 - 6 - 4 - 2 9 11 7 13 15 c e (pf) 5
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 11 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 8. test information 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping fig 19. package outline sot363 (sc-88) 06-03-16 dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 4 65 table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 BC846BPN sot363 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 12 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 11. soldering fig 20. re?ow soldering footprint sot363 (sc-88) fig 21. wave soldering footprint sot363 (sc-88) solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2 ) 0.6 (2 ) 0.5 (4 ) 0.5 (4 ) 0.6 (4 ) 0.6 (4 ) 1.5 1.8 dimensions in mm sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 dimensions in mm
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 13 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 12. revision history table 10. revision history document id release date data sheet status change notice supersedes BC846BPN_1 20090717 product data sheet - -
BC846BPN_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 17 july 2009 14 of 15 nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BC846BPN 65 v, 100 ma npn/pnp general-purpose transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 17 july 2009 document identifier: BC846BPN_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 8.1 quality information . . . . . . . . . . . . . . . . . . . . . 11 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 packing information. . . . . . . . . . . . . . . . . . . . . 11 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 contact information. . . . . . . . . . . . . . . . . . . . . 14 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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